GaN-Based High Electron Mobility Transistor with Trench-Composite Gate and Asymmetric InAlN/AlGaN Barriers
Chuan-Tao Sun; Li-E Cai; Yi-Fei Chen; Zhi-Yu Ma; Xiang-Yu Liu; Rong-Sheng Zheng; Zai-Jun Cheng; Hai-Feng Lin; Ji-Yan Zhang
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Semiconductors
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1063782625602572
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Cite this source
Chuan-Tao Sun; Li-E Cai; Yi-Fei Chen; Zhi-Yu Ma; Xiang-Yu Liu; Rong-Sheng Zheng; Zai-Jun Cheng; Hai-Feng Lin; Ji-Yan Zhang. GaN-Based High Electron Mobility Transistor with Trench-Composite Gate and Asymmetric InAlN/AlGaN Barriers. Semiconductors. 2025-10. https://doi.org/10.1134/s1063782625602572