Field-Effect Transistor Based on Reduced Graphene Oxide Film with ZnO and Porous Silicon Absorbing Layers for Ionizing Radiation Detection
I. B. Olenych; Yu. Yu. Horbenko; M. R. Pavlyk; B. S. Sokolovskii; O. S. Dzendzelyuk
- Published
- Publisher
- Sumy State University
- Journal / collection
- Journal of Nano- and Electronic Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.21272/jnep.18(2).02026
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Cite this source
I. B. Olenych; Yu. Yu. Horbenko; M. R. Pavlyk; B. S. Sokolovskii; O. S. Dzendzelyuk. Field-Effect Transistor Based on Reduced Graphene Oxide Film with ZnO and Porous Silicon Absorbing Layers for Ionizing Radiation Detection. Journal of Nano- and Electronic Physics. 2026. https://doi.org/10.21272/jnep.18(2).02026