N-polar AlN-based enhancement-mode transistor with p-NiO x gate stacks and reduced buffer trapping
Chengzhi Zhang; Yidi Yin; Peng Huang; Itsuki Furuhashi; Yoann Robin; Markus Pristovsek; Martin Kuball; Matthew D Smith
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Journal of Physics D: Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-6463/ae161c
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Cite this source
Chengzhi Zhang; Yidi Yin; Peng Huang; Itsuki Furuhashi; Yoann Robin; Markus Pristovsek; Martin Kuball; Matthew D Smith. N-polar AlN-based enhancement-mode transistor with p-NiO x gate stacks and reduced buffer trapping. Journal of Physics D: Applied Physics. 2025-11-26. https://doi.org/10.1088/1361-6463/ae161c