Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping
JaeHyeong Park; Hyo-Bae Kim; Sang Min Yu; Kihwan Kim; Ju Heyuck Baeck; Jiyong Noh; Kwon-Shik Park; Soo-Young Yoon; Ji-Hoon Ahn; Saeroonter Oh
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Scientific Reports
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41598-025-07995-3
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Cite this source
JaeHyeong Park; Hyo-Bae Kim; Sang Min Yu; Kihwan Kim; Ju Heyuck Baeck; Jiyong Noh; Kwon-Shik Park; Soo-Young Yoon; Ji-Hoon Ahn; Saeroonter Oh. Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping. Scientific Reports. 2025-07-02. https://doi.org/10.1038/s41598-025-07995-3