Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel
Quyen Tran; John Hayden; Joseph Casamento; Jon-Paul Maria; Thomas N. Jackson
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3570279
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Cite this source
Quyen Tran; John Hayden; Joseph Casamento; Jon-Paul Maria; Thomas N. Jackson. Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel. IEEE Transactions on Electron Devices. 2025-07. https://doi.org/10.1109/ted.2025.3570279