Dielectric integration and interface defect engineering in β-Ga2O3 metal–oxide–semiconductor (MOS) devices
Ahmad E. Islam; Kevin D. Leedy; Weisong Wang; Adam Miesle; Kyle J. Liddy; Daniel M. Dryden; Nolan S. Hendricks; Thaddeus Asel; Kelson D. Chabak; Andrew J. Green
- Published
- Publisher
- AIP Publishing
- Journal / collection
- APL Electronic Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0316502
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Cite this source
Ahmad E. Islam; Kevin D. Leedy; Weisong Wang; Adam Miesle; Kyle J. Liddy; Daniel M. Dryden; Nolan S. Hendricks; Thaddeus Asel; Kelson D. Chabak; Andrew J. Green. Dielectric integration and interface defect engineering in β-Ga2O3 metal–oxide–semiconductor (MOS) devices. APL Electronic Devices. 2026-03-01. https://doi.org/10.1063/5.0316502