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Research literature / Conference paper

Low-Temperature Ni-Silicide Initiated Lateral Epitaxial Crystallization with Orientation and Grain Boundary Control for Stackable Transistor Technologies

Mingmin Shi; Baotong Zhang; Jianhuan Wang; Jianjun Zhang; Ming Li

Published
Publisher
IEEE
Journal / collection
2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/edtm65772.2026.11496934

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Mingmin Shi; Baotong Zhang; Jianhuan Wang; Jianjun Zhang; Ming Li. Low-Temperature Ni-Silicide Initiated Lateral Epitaxial Crystallization with Orientation and Grain Boundary Control for Stackable Transistor Technologies. 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2026-03-01. https://doi.org/10.1109/edtm65772.2026.11496934

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