Hierarchical Measurement Model of Semiconductor Silicon Carbide Epilayer Thickness Based on Infrared Interferometry
Bowen Ye
- Published
- Publisher
- Darcy & Roy Press Co. Ltd.
- Journal / collection
- Journal of Computer Science and Artificial Intelligence
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.54097/382ns292
The original publisher provides the full text and its access options.
Cite this source
Bowen Ye. Hierarchical Measurement Model of Semiconductor Silicon Carbide Epilayer Thickness Based on Infrared Interferometry. Journal of Computer Science and Artificial Intelligence. 2025-12-16. https://doi.org/10.54097/382ns292