High performance metal-semiconductor field-effect transistors on zirconium doped α-Ga2O3
Sofie Vogt; S. Köpp; P. Bokemeyer; D. Splith; P. Schlupp; C. Petersen; H. von Wenckstern; M. Grundmann
- Published
- Publisher
- SPIE
- Journal / collection
- Oxide-based Materials and Devices XVII
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1117/12.3081796
The original publisher provides the full text and its access options.
Cite this source
Sofie Vogt; S. Köpp; P. Bokemeyer; D. Splith; P. Schlupp; C. Petersen; H. von Wenckstern; M. Grundmann. High performance metal-semiconductor field-effect transistors on zirconium doped α-Ga2O3. Oxide-based Materials and Devices XVII. 2026-03-05. https://doi.org/10.1117/12.3081796