Toward theory of field-effect tunneling transistor based on vertical graphene heterostructures
Michael Davidovich; Igor Nefedov
- Published
- Publisher
- IOP Publishing
- Journal / collection
- 2D Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/2053-1583/ae3c32
The original publisher provides the full text and its access options.
Cite this source
Michael Davidovich; Igor Nefedov. Toward theory of field-effect tunneling transistor based on vertical graphene heterostructures. 2D Materials. 2026-02-05. https://doi.org/10.1088/2053-1583/ae3c32