Solution-processed charge-trap/ferroelectric hybrid memory transistor for enhanced data storage and neuromorphic computing
Hayoung Kim; Amos A. Boampong; Yujeong Hwang; Sin-Hyung Lee; Min-Hoi Kim
- Published
- Publisher
- Royal Society of Chemistry (RSC)
- Journal / collection
- Journal of Materials Chemistry C
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1039/d5tc03771a
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Cite this source
Hayoung Kim; Amos A. Boampong; Yujeong Hwang; Sin-Hyung Lee; Min-Hoi Kim. Solution-processed charge-trap/ferroelectric hybrid memory transistor for enhanced data storage and neuromorphic computing. Journal of Materials Chemistry C. 2026. https://doi.org/10.1039/d5tc03771a