Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias
Peng Huang; Matthew D. Smith; Michael J. Uren; Zequan Chen; Benoit Bakeroot; Anurag Vohra; Stefaan Decoutere; Martin Kuball
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3571004
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Cite this source
Peng Huang; Matthew D. Smith; Michael J. Uren; Zequan Chen; Benoit Bakeroot; Anurag Vohra; Stefaan Decoutere; Martin Kuball. Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias. IEEE Transactions on Electron Devices. 2025-07. https://doi.org/10.1109/ted.2025.3571004