Mechanism of GaN high electron mobility transistor interface engineering in enhancing high-temperature and dynamic bias reliability
Ziyan WAN; Haoran ZHANG; Xiao LI; Jing NING; Yue HAO; Jincheng ZHANG
- Published
- Publisher
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
- Journal / collection
- Acta Physica Sinica
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.7498/aps.75.20251629
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Cite this source
Ziyan WAN; Haoran ZHANG; Xiao LI; Jing NING; Yue HAO; Jincheng ZHANG. Mechanism of GaN high electron mobility transistor interface engineering in enhancing high-temperature and dynamic bias reliability. Acta Physica Sinica. 2026. https://doi.org/10.7498/aps.75.20251629