Field effect transistor like behaviour of Skyrmions in Nanowire Memory Devices
GuoDong Dong; Jieyao Chen; Jiaming Zhang; Junlin Wang; Guanqi Li; Zhendong Chen; Jing Wu; Yongbing Xu
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Chinese Physics B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1674-1056/ae5213
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Cite this source
GuoDong Dong; Jieyao Chen; Jiaming Zhang; Junlin Wang; Guanqi Li; Zhendong Chen; Jing Wu; Yongbing Xu. Field effect transistor like behaviour of Skyrmions in Nanowire Memory Devices. Chinese Physics B. 2026-03-16. https://doi.org/10.1088/1674-1056/ae5213