High-quality β-(Al x Ga 1- x ) 2 O 3 heteroepitaxy grown on (010) Ga 2 O 3 via MOCVD and transistor demonstration
Haozhong Wu; Hongyu Liu; Xuanze Zhou; Guangwei Xu; Yuangang Wang; Yuanjie Lv; Zhihong Feng; Shibing Long
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Semiconductor Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-6641/ae26c3
The original publisher provides the full text and its access options.
Cite this source
Haozhong Wu; Hongyu Liu; Xuanze Zhou; Guangwei Xu; Yuangang Wang; Yuanjie Lv; Zhihong Feng; Shibing Long. High-quality β-(Al x Ga 1- x ) 2 O 3 heteroepitaxy grown on (010) Ga 2 O 3 via MOCVD and transistor demonstration. Semiconductor Science and Technology. 2026-01-01. https://doi.org/10.1088/1361-6641/ae26c3