Theory of the Bipolar Transistor, Taking into Account the Structure of a Solid and the Presence of Negative Ions. Part 1. Structure of a Semiconductor Solid Doped with Arsenic and Indium
L. I. Gretchikhin
- Published
- Publisher
- Belarusian National Technical University
- Journal / collection
- ENERGETIKA. Proceedings of CIS higher education institutions and power engineering associations
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.21122/1029-7448-2025-68-6-491-503
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Cite this source
L. I. Gretchikhin. Theory of the Bipolar Transistor, Taking into Account the Structure of a Solid and the Presence of Negative Ions. Part 1. Structure of a Semiconductor Solid Doped with Arsenic and Indium. ENERGETIKA. Proceedings of CIS higher education institutions and power engineering associations. 2025-12-01. https://doi.org/10.21122/1029-7448-2025-68-6-491-503