Wide-Range Threshold Voltage Control of Dual-Inner-Gate Gate-All-Around Field-Effect Transistor
Seungjoon Jeong; Changhwan Shin
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Device and Materials Reliability
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tdmr.2025.3605684
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Cite this source
Seungjoon Jeong; Changhwan Shin. Wide-Range Threshold Voltage Control of Dual-Inner-Gate Gate-All-Around Field-Effect Transistor. IEEE Transactions on Device and Materials Reliability. 2025-12. https://doi.org/10.1109/tdmr.2025.3605684