High-Performance p -Type Field-Effect Transistor Based on WS 2 Monolayer Prepared by Liquid-Phase-Assisted Space-Confined CVD
Xiao Yu; Li-ping Feng; Lingfeng Jia; Xin Zhang; Yunjia Huang; Pengfei Liu; Xitong Wang; Yulong Yang; Dongming Sun; Ting Yu
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Materials Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsmaterialslett.5c00566
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Cite this source
Xiao Yu; Li-ping Feng; Lingfeng Jia; Xin Zhang; Yunjia Huang; Pengfei Liu; Xitong Wang; Yulong Yang; Dongming Sun; Ting Yu. High-Performance p -Type Field-Effect Transistor Based on WS 2 Monolayer Prepared by Liquid-Phase-Assisted Space-Confined CVD. ACS Materials Letters. 2025-07-01. https://doi.org/10.1021/acsmaterialslett.5c00566