Source‐Connected Field‐Plate Effects on Static Current, Trap Signature, and Thermal Resistance of AlGaN/GaN High Electron Mobility Transistor
Vaidehi Vijay Painter; Audrey Martin; Raphael Sommet; Florent Gaillard; P. Vigneshwara Raja
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202500837
The original publisher provides the full text and its access options.
Cite this source
Vaidehi Vijay Painter; Audrey Martin; Raphael Sommet; Florent Gaillard; P. Vigneshwara Raja. Source‐Connected Field‐Plate Effects on Static Current, Trap Signature, and Thermal Resistance of AlGaN/GaN High Electron Mobility Transistor. physica status solidi (a). 2026-01. https://doi.org/10.1002/pssa.202500837