Analysis of Device Parameters on Steep Subthreshold Slope Gate-Controlled Carrier-Injection Silicon-on-Insulator Transistor
Haruki YONEZAKI; Kyouichiro SUZUKI; Takayuki MORI; Jiro IDA
- Published
- Publisher
- Institute of Electronics, Information and Communications Engineers (IEICE)
- Journal / collection
- IEICE Transactions on Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1587/transele.2025fup0004
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Cite this source
Haruki YONEZAKI; Kyouichiro SUZUKI; Takayuki MORI; Jiro IDA. Analysis of Device Parameters on Steep Subthreshold Slope Gate-Controlled Carrier-Injection Silicon-on-Insulator Transistor. IEICE Transactions on Electronics. 2026-09-01. https://doi.org/10.1587/transele.2025fup0004