Alloying and Doping Effect on the Structural, Electronic, Optic and Photovoltaic Properties of GaP Semiconductor
F. Saghi; B. Bouhadef; N. Beloufa; M. Ghezali; F. Khelfaoui; H. Achour; R. González-Hernández; A. Bouhemadou; K. Talbi; Y. Cherchab
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Russian Journal of Physical Chemistry B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1990793126700107
The original publisher provides the full text and its access options.
Cite this source
F. Saghi; B. Bouhadef; N. Beloufa; M. Ghezali; F. Khelfaoui; H. Achour; R. González-Hernández; A. Bouhemadou; K. Talbi; Y. Cherchab. Alloying and Doping Effect on the Structural, Electronic, Optic and Photovoltaic Properties of GaP Semiconductor. Russian Journal of Physical Chemistry B. 2026-05. https://doi.org/10.1134/s1990793126700107