Dislocation characterization of GaN layers in high-performance, High-Electron-Mobility Transistor structures grown on on-axis and off-axis 4H-SiC(0001) substrates
Seung Min Lee; Woon Jae Ruh; Hyun Jin Choi; Da Mi Kwon; Eun Ah Cheon; Minhyuk Choi; Young-Kyun Noh; Mino Yang; Seungwoo Song; Young Heon Kim
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Science in Semiconductor Processing
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mssp.2025.109395
The original publisher provides the full text and its access options.
Cite this source
Seung Min Lee; Woon Jae Ruh; Hyun Jin Choi; Da Mi Kwon; Eun Ah Cheon; Minhyuk Choi; Young-Kyun Noh; Mino Yang; Seungwoo Song; Young Heon Kim. Dislocation characterization of GaN layers in high-performance, High-Electron-Mobility Transistor structures grown on on-axis and off-axis 4H-SiC(0001) substrates. Materials Science in Semiconductor Processing. 2025-06. https://doi.org/10.1016/j.mssp.2025.109395