Review of aluminum nitride buffer layer for high electron mobility transistor applications: growth technique and substrate choice
Natasya Salsabiila; Nafarizal Nayan; Zulkifli Azman; Anis Suhaili Bakri; Ahmad Shuhaimi Abu Bakar; Feri Adriyanto
- Published
- Publisher
- Emerald
- Journal / collection
- Microelectronics International
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1108/mi-09-2025-0196
The original publisher provides the full text and its access options.
Cite this source
Natasya Salsabiila; Nafarizal Nayan; Zulkifli Azman; Anis Suhaili Bakri; Ahmad Shuhaimi Abu Bakar; Feri Adriyanto. Review of aluminum nitride buffer layer for high electron mobility transistor applications: growth technique and substrate choice. Microelectronics International. 2026-04-07. https://doi.org/10.1108/mi-09-2025-0196