Retention Characteristics of the Synaptic Pass-Transistor Dependent on the Position of the Load Resistor for the Long-Term Plasticity
Hyeri Kim; Jeongseok Pi; Younggeon Ko; Sungsik Lee
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2026.3694348
The original publisher provides the full text and its access options.
Cite this source
Hyeri Kim; Jeongseok Pi; Younggeon Ko; Sungsik Lee. Retention Characteristics of the Synaptic Pass-Transistor Dependent on the Position of the Load Resistor for the Long-Term Plasticity. IEEE Transactions on Electron Devices. 2026-07. https://doi.org/10.1109/ted.2026.3694348