20 MeV·cm 2 /mg Linear Energy Transfer Radiation Tolerant Six-Transistor Static-Random-Access-Memory Cell in 28 nm CMOS Technology
Luca Gelmi; Mirco Malanchini; Andrea La Gala; Matteo Chiariello; Mattia Tambaro; Marcello De Matteis
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 20th International Conference on PhD Research in Microelectronics and Electronics (PRIME)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/prime66228.2025.11203670
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Cite this source
Luca Gelmi; Mirco Malanchini; Andrea La Gala; Matteo Chiariello; Mattia Tambaro; Marcello De Matteis. 20 MeV·cm 2 /mg Linear Energy Transfer Radiation Tolerant Six-Transistor Static-Random-Access-Memory Cell in 28 nm CMOS Technology. 2025 20th International Conference on PhD Research in Microelectronics and Electronics (PRIME). 2025-09-21. https://doi.org/10.1109/prime66228.2025.11203670