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On the Statistical Variability of High-Performance Crystalline InGaOx Nanosheet Oxide Semiconductor FETs

Xingyu Huang; Kota Sakai; Anlan Chen; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Takuya Saraya; Toshiro Hiramoto; Masaharu Kobayashi

Published
Publisher
IEEE
Journal / collection
2025 IEEE International Electron Devices Meeting (IEDM)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/iedm50572.2025.11353571

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Xingyu Huang; Kota Sakai; Anlan Chen; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Takuya Saraya; Toshiro Hiramoto; Masaharu Kobayashi. On the Statistical Variability of High-Performance Crystalline InGaOx Nanosheet Oxide Semiconductor FETs. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353571

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