Scalable High-Voltage Pass Transistor Strustures: Physical-based and Variation-Aware Evaluation Toward 1000 Layer 3D NAND Flash
Namju Kim; Hyeun Woo Shin; Chae Eun Kim; Woo Cheol Shin; Suk-Kang Sung; Byung Chul Jang
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 IEEE International Reliability Physics Symposium (IRPS)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/irps61424.2026.11499177
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Cite this source
Namju Kim; Hyeun Woo Shin; Chae Eun Kim; Woo Cheol Shin; Suk-Kang Sung; Byung Chul Jang. Scalable High-Voltage Pass Transistor Strustures: Physical-based and Variation-Aware Evaluation Toward 1000 Layer 3D NAND Flash. 2026 IEEE International Reliability Physics Symposium (IRPS). 2026-03. https://doi.org/10.1109/irps61424.2026.11499177