Piezotronic transistor based on strained GaN with high hole mobility
Changming Xie; Yaming Zhang; Jiaheng Nie; Ruhao Liu; Xin Cui; Nian Liu; Yan Zhang
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Nano Energy
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.nanoen.2025.110883
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Cite this source
Changming Xie; Yaming Zhang; Jiaheng Nie; Ruhao Liu; Xin Cui; Nian Liu; Yan Zhang. Piezotronic transistor based on strained GaN with high hole mobility. Nano Energy. 2025-06. https://doi.org/10.1016/j.nanoen.2025.110883