Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory
Feng-Hui Gong; Songge Zhang; Na Li; Xiangwei Guo; Yu-Ting Chen; Yin-Lian Zhu; Jing-Hui Wang; Shuai-Shuai Yin; Xiao-Long Li; Yu-Jia Wang; Hua Yu; Yun-Long Tang; Zijian Hong; Xiaoming Tao; Yang Chai; Guangyu Zhang; Xiu-Liang Ma
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Nature Communications
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41467-026-77913-2
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Cite this source
Feng-Hui Gong; Songge Zhang; Na Li; Xiangwei Guo; Yu-Ting Chen; Yin-Lian Zhu; Jing-Hui Wang; Shuai-Shuai Yin; Xiao-Long Li; Yu-Jia Wang; Hua Yu; Yun-Long Tang; Zijian Hong; Xiaoming Tao; Yang Chai; Guangyu Zhang; Xiu-Liang Ma. Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory. Nature Communications. 2026-09-21. https://doi.org/10.1038/s41467-026-77913-2