Layer-Wise Dislocation Distribution and Stress Evolution in a GaN-Based High Electron Mobility Transistor Studied by X-ray Nanodiffraction
Thi Thu Mai; Jin-Ji Dai; Ching-Yu Chiang; Wu-Ching Chou
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Nano Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsanm.5c02355
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Cite this source
Thi Thu Mai; Jin-Ji Dai; Ching-Yu Chiang; Wu-Ching Chou. Layer-Wise Dislocation Distribution and Stress Evolution in a GaN-Based High Electron Mobility Transistor Studied by X-ray Nanodiffraction. ACS Applied Nano Materials. 2025-07-18. https://doi.org/10.1021/acsanm.5c02355