An analytical physics-based model for low-field mobility in nitride high-electron-mobility transistor considering the momentum relaxation and two-dimensional electronic gas effective mass
Amgad A. Al-Saman; Xiaoqin Yang; Yi Pei; Hong Gu; Ke Xu
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0288826
The original publisher provides the full text and its access options.
Cite this source
Amgad A. Al-Saman; Xiaoqin Yang; Yi Pei; Hong Gu; Ke Xu. An analytical physics-based model for low-field mobility in nitride high-electron-mobility transistor considering the momentum relaxation and two-dimensional electronic gas effective mass. Journal of Applied Physics. 2025-10-09. https://doi.org/10.1063/5.0288826