Performance Investigation of HfO X -Based 1-Transistor–1-Memristor Cell for In-Memory Logic Gates Implementation
Mani Shankar Yadav; Sukesh Gupta; Avinash Kumar Gupta; Brajesh Rawat
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/jetcas.2026.3683734
The original publisher provides the full text and its access options.
Cite this source
Mani Shankar Yadav; Sukesh Gupta; Avinash Kumar Gupta; Brajesh Rawat. Performance Investigation of HfO X -Based 1-Transistor–1-Memristor Cell for In-Memory Logic Gates Implementation. IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 2026-06. https://doi.org/10.1109/jetcas.2026.3683734