Optimization and Mitigation of Access-Transistor-Induced Reliability Degradation in 28 nm 1T1R RRAM Arrays
Yuhang Yang; Zongwei Wang; Shengyu Bao; Zheng Zhou; Lin Bao; Yimao Cai
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3644276
The original publisher provides the full text and its access options.
Cite this source
Yuhang Yang; Zongwei Wang; Shengyu Bao; Zheng Zhou; Lin Bao; Yimao Cai. Optimization and Mitigation of Access-Transistor-Induced Reliability Degradation in 28 nm 1T1R RRAM Arrays. IEEE Transactions on Electron Devices. 2026-02. https://doi.org/10.1109/ted.2025.3644276