Performance Investigation of a Novel Ferroelectric-Drain Underlap Negative Capacitance Tunnel Field-Effect Transistor
Weihan Sun; Yunhe Guan; Haotong Han; Tonqing Yan; Zhen Dou; Jiachen Lu; Haifeng Chen
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 4th International Symposium on Semiconductor and Electronic Technology (ISSET)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/isset66828.2025.11184915
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Cite this source
Weihan Sun; Yunhe Guan; Haotong Han; Tonqing Yan; Zhen Dou; Jiachen Lu; Haifeng Chen. Performance Investigation of a Novel Ferroelectric-Drain Underlap Negative Capacitance Tunnel Field-Effect Transistor. 2025 4th International Symposium on Semiconductor and Electronic Technology (ISSET). 2025-07-24. https://doi.org/10.1109/isset66828.2025.11184915