The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor
Po-Hsuan Chang; Chong-Rong Huang; Chia-Hao Liu; Kuan-Wei Lee; Hsien-Chin Chiu
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi16091034
The original publisher provides the full text and its access options.
Cite this source
Po-Hsuan Chang; Chong-Rong Huang; Chia-Hao Liu; Kuan-Wei Lee; Hsien-Chin Chiu. The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. Micromachines. 2025-09-10. https://doi.org/10.3390/mi16091034