n-Type Metal-Oxide-Semiconductor Field-Effect Transistor Based on 100-Period Fully Strained SiGe/Si Nanostructures with Superlattice Epitaxy for Three-Dimensional Dynamic Random-Access Memory
Ying Zhang; Xiangsheng Wang; Shujuan Mao; Jing Liang; Mingli Liu; Xinhe Wang; Han Wang; Wenhao Zhang; Hailing Wang; Yanpeng Song; Xiaomeng Liu; Xinyou Liu; Zhenzhen Kong; Zhaoqiang Bai; Guilei Wang; Chao Zhao
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Nano Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsanm.5c00426
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Cite this source
Ying Zhang; Xiangsheng Wang; Shujuan Mao; Jing Liang; Mingli Liu; Xinhe Wang; Han Wang; Wenhao Zhang; Hailing Wang; Yanpeng Song; Xiaomeng Liu; Xinyou Liu; Zhenzhen Kong; Zhaoqiang Bai; Guilei Wang; Chao Zhao. n-Type Metal-Oxide-Semiconductor Field-Effect Transistor Based on 100-Period Fully Strained SiGe/Si Nanostructures with Superlattice Epitaxy for Three-Dimensional Dynamic Random-Access Memory. ACS Applied Nano Materials. 2025-04-07. https://doi.org/10.1021/acsanm.5c00426