First principles prediction of ultra-high electron mobility in the layered semiconductor Bi2Si
Minghao Lv; Zhengjin Gao; Changzhi Gu; Geng Li; Baoli Liu; David J. Singh; Weitao Zheng; Xiaofeng Fan
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Today Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mtphys.2025.101898
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Cite this source
Minghao Lv; Zhengjin Gao; Changzhi Gu; Geng Li; Baoli Liu; David J. Singh; Weitao Zheng; Xiaofeng Fan. First principles prediction of ultra-high electron mobility in the layered semiconductor Bi2Si. Materials Today Physics. 2025-12. https://doi.org/10.1016/j.mtphys.2025.101898