Tellurium‐Induced Phase‐Orbital Coupling Enables High‐Mobility p‐Type Tin Oxide Transistor
Yu Song; Xianglong Zhang; Rui He; Runtong Guo; Xuefang Yan; Lin Tang; Weimin Pan; Ruohao Hong; Xingqiang Liu; Xuming Zou; Benjamin Iñiguez; You Meng; Denis Flandre; Jean‐Pierre Raskin; Wei‐Qing Huang; Lei Liao; Guoli Li
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Functional Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adfm.78328
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Cite this source
Yu Song; Xianglong Zhang; Rui He; Runtong Guo; Xuefang Yan; Lin Tang; Weimin Pan; Ruohao Hong; Xingqiang Liu; Xuming Zou; Benjamin Iñiguez; You Meng; Denis Flandre; Jean‐Pierre Raskin; Wei‐Qing Huang; Lei Liao; Guoli Li. Tellurium‐Induced Phase‐Orbital Coupling Enables High‐Mobility p‐Type Tin Oxide Transistor. Advanced Functional Materials. 2026-09-09. https://doi.org/10.1002/adfm.78328