Diffusion of deuterium in the InSb semiconductor at liquid nitrogen temperature
M. N. Mikheev Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences; V. B. Vykhodets; T. E. Kurennykh; M. N. Mikheev Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences
- Published
- Publisher
- Institute of Engineering Science, Ural Branch RAS
- Journal / collection
- Diagnostics, Resource and Mechanics of materials and structures
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.17804/2410-9908.2025.5.029-038
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Cite this source
M. N. Mikheev Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences; V. B. Vykhodets; T. E. Kurennykh; M. N. Mikheev Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences. Diffusion of deuterium in the InSb semiconductor at liquid nitrogen temperature. Diagnostics, Resource and Mechanics of materials and structures. 2025-10. https://doi.org/10.17804/2410-9908.2025.5.029-038