An enhancement-mode GaN based p-channel heterostructure field effect transistor with Ga 2 O 3 /AlGaN hybrid barrier layer
Mei Ge; Wenqian Zhang; Meijing Lu; Yingyuan Gao; Yi Li; Chenhui Yu; Dunjun Chen
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ae585d
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Cite this source
Mei Ge; Wenqian Zhang; Meijing Lu; Yingyuan Gao; Yi Li; Chenhui Yu; Dunjun Chen. An enhancement-mode GaN based p-channel heterostructure field effect transistor with Ga 2 O 3 /AlGaN hybrid barrier layer. Japanese Journal of Applied Physics. 2026-04-16. https://doi.org/10.35848/1347-4065/ae585d