Quantification of the effects of Si3N4 gate thickness on the enhancement of a-Si:H thin film transistor performances
Djemâa Ben Othmane; Houssem Eddine Doghmane; Elfahem Sakher; Nozha El Ahlem Doghmane; Cristian Vacacela Gomez; Abdellaziz Doghmane
- Published
- Publisher
- Frontiers Media SA
- Journal / collection
- Frontiers in Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3389/fphy.2026.1886901
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Cite this source
Djemâa Ben Othmane; Houssem Eddine Doghmane; Elfahem Sakher; Nozha El Ahlem Doghmane; Cristian Vacacela Gomez; Abdellaziz Doghmane. Quantification of the effects of Si3N4 gate thickness on the enhancement of a-Si:H thin film transistor performances. Frontiers in Physics. 2026-08-11. https://doi.org/10.3389/fphy.2026.1886901