A Channel-Carrier Mobility Model With Gate Screening Effect for Thin-Film Transistor With High- k Gate Dielectric
Qing He Wang; Hui Su; Hao Sun; P. T. Lai
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2025.3631874
The original publisher provides the full text and its access options.
Cite this source
Qing He Wang; Hui Su; Hao Sun; P. T. Lai. A Channel-Carrier Mobility Model With Gate Screening Effect for Thin-Film Transistor With High- k Gate Dielectric. IEEE Electron Device Letters. 2026-01. https://doi.org/10.1109/led.2025.3631874