High-Gain/Low-$V_{f}$ GaN Bipolar Junction Transistor Based on Heterogeneous Integration Process for Bandgap Reference Application
Yukai Huang; Junfeng Yu; Junyan Zhu; Xiaodong Yang; Wenzhang Du; Jiao Liang; Ruihan Gao; Chunlei Wu; Hongping Ma; Qingchun Zhang; Jun Tang; Liang Li; Wei Huang; David Wei Zhang
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.23919/ispsd62843.2025.11117430
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Cite this source
Yukai Huang; Junfeng Yu; Junyan Zhu; Xiaodong Yang; Wenzhang Du; Jiao Liang; Ruihan Gao; Chunlei Wu; Hongping Ma; Qingchun Zhang; Jun Tang; Liang Li; Wei Huang; David Wei Zhang. High-Gain/Low-$V_{f}$ GaN Bipolar Junction Transistor Based on Heterogeneous Integration Process for Bandgap Reference Application. 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2025-06-01. https://doi.org/10.23919/ispsd62843.2025.11117430