Material and Electrical Characteristics of a Thin-Film Transistor Using Cationic Composition-Controlled Atomic Layer-Deposited In–Ga–Sn–O (IGTO) Thin Film
Chanseul Lee; Sunbum Kim; Kyoung Yeon Min; Gyulee Kim; Minhyuk Kim; Yongjoo Park; Changhwan Choi
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.5c01836
The original publisher provides the full text and its access options.
Cite this source
Chanseul Lee; Sunbum Kim; Kyoung Yeon Min; Gyulee Kim; Minhyuk Kim; Yongjoo Park; Changhwan Choi. Material and Electrical Characteristics of a Thin-Film Transistor Using Cationic Composition-Controlled Atomic Layer-Deposited In–Ga–Sn–O (IGTO) Thin Film. ACS Applied Electronic Materials. 2026-01-27. https://doi.org/10.1021/acsaelm.5c01836