15.10 A Vertical-Cell-Transistor-Based 4F 2 DRAM with Cell-on-Peripheral Architecture Using Wafer-to-Wafer Hybrid Copper Bonding
Hyunchul Yoon; Youngseok Park; Tae Jin Park; Suk Lae Kim; Seungjae Jung; Daesun Kim; Kyunghwan Kim; Yongjun Kim; KyuChang Kang; Bokyeon Won; Sang-Hoon Jung; Seunghan Woo; Donggeon Kim; Jonghyuk Kim; In Jung; Junsoo Kim; Jae-Joon Song; InCheol Nam; Young-Hun Seo; Sungsoo Yim
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 IEEE International Solid-State Circuits Conference (ISSCC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/isscc49663.2026.11409152
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Cite this source
Hyunchul Yoon; Youngseok Park; Tae Jin Park; Suk Lae Kim; Seungjae Jung; Daesun Kim; Kyunghwan Kim; Yongjun Kim; KyuChang Kang; Bokyeon Won; Sang-Hoon Jung; Seunghan Woo; Donggeon Kim; Jonghyuk Kim; In Jung; Junsoo Kim; Jae-Joon Song; InCheol Nam; Young-Hun Seo; Sungsoo Yim. 15.10 A Vertical-Cell-Transistor-Based 4F 2 DRAM with Cell-on-Peripheral Architecture Using Wafer-to-Wafer Hybrid Copper Bonding. 2026 IEEE International Solid-State Circuits Conference (ISSCC). 2026-02. https://doi.org/10.1109/isscc49663.2026.11409152