Enhanced Performance and Reliability of Non-Uniform Channel Double-Gate Tunnel Field Effect Transistor with InGaSb Pocket Modulation
Rajeev Kumar Sachan; Vedvrat; Shrish Bajpai
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Physics of the Solid State
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1063783425602267
The original publisher provides the full text and its access options.
Cite this source
Rajeev Kumar Sachan; Vedvrat; Shrish Bajpai. Enhanced Performance and Reliability of Non-Uniform Channel Double-Gate Tunnel Field Effect Transistor with InGaSb Pocket Modulation. Physics of the Solid State. 2025-10. https://doi.org/10.1134/s1063783425602267