A Novel Indium Gallium Zinc Oxide Channel‐Based Electrochemical Field Effect Transistor for Physical Reservoir Computing
Hyejin Kim; Jinho Byun; Junghoon Park; Kiheun Lee; Daewon Ha; Seyoung Kim
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Intelligent Systems
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aisy.202500285
The original publisher provides the full text and its access options.
Cite this source
Hyejin Kim; Jinho Byun; Junghoon Park; Kiheun Lee; Daewon Ha; Seyoung Kim. A Novel Indium Gallium Zinc Oxide Channel‐Based Electrochemical Field Effect Transistor for Physical Reservoir Computing. Advanced Intelligent Systems. 2025-07-24. https://doi.org/10.1002/aisy.202500285