Total-Ionizing-Dose Radiation Effect on Current Gain for Bipolar Junction Transistor Based 18 V BCD Technology
Xin Zhou; Hongze Chu; Yanfei Li; Shenghuai Liu; Hong Peng; Hao Jiang; Rubin Xie; Bo Zhang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Device and Materials Reliability
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tdmr.2026.3669599
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Cite this source
Xin Zhou; Hongze Chu; Yanfei Li; Shenghuai Liu; Hong Peng; Hao Jiang; Rubin Xie; Bo Zhang. Total-Ionizing-Dose Radiation Effect on Current Gain for Bipolar Junction Transistor Based 18 V BCD Technology. IEEE Transactions on Device and Materials Reliability. 2026-06. https://doi.org/10.1109/tdmr.2026.3669599