Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration
Hyeong Jun Seo; Kanghyeon Byun; Minseung Kang; Youngchae Roh; Changhoon Joe; Sangbum Kim
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Intelligent Systems
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aisy.202500139
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Cite this source
Hyeong Jun Seo; Kanghyeon Byun; Minseung Kang; Youngchae Roh; Changhoon Joe; Sangbum Kim. Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration. Advanced Intelligent Systems. 2025-07-07. https://doi.org/10.1002/aisy.202500139