Investigation of Gate all around Dual Metal gate Silicon Carbide Nanowire Field Effect Transistor for harsh Chemical environment applications
Anshul Saxena; Deboraj Muchahary; B Acharya
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE 6th India Council International Subsections Conference (INDISCON)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/indiscon66021.2025.11252276
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Cite this source
Anshul Saxena; Deboraj Muchahary; B Acharya. Investigation of Gate all around Dual Metal gate Silicon Carbide Nanowire Field Effect Transistor for harsh Chemical environment applications. 2025 IEEE 6th India Council International Subsections Conference (INDISCON). 2025-08-21. https://doi.org/10.1109/indiscon66021.2025.11252276